RU80N15

RU80N15 N-Channel Advanced Power MOSFET Features · 150V/80A RDS (ON)=31mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Pin Description TO-220 TO-263 TO-220F TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev. C – JAN., 2010 Rating 150 ±25 175 -55 to 175 80 300 ① 80 ② 60 400 220 0.45 62.5 1000 Unit V °C °C A A W °C/W mJ www.ruichips.com RU80N15 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80N15 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 150 VDS= 150V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS...