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1KSMB68CA Dataheets PDF



Part Number 1KSMB68CA
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Transient Voltage Suppressor
Datasheet 1KSMB68CA Datasheet1KSMB68CA Datasheet (PDF)

1KSMB SERIES Taiwan Semiconductor CREAT BY ART 1000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified DO-214AA (SMB) MEC.

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1KSMB SERIES Taiwan Semiconductor CREAT BY ART 1000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.11 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Peak power dissipation at TA=25°C, tp=1ms (Note 1) Steady state power dissipation PPK PD 1000 5 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2) VF 3.5 / 5.0 Typical thermal resistance RθJL RθJA Operating junction temperature range TJ Storage temperature range TSTG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2 Note 2: VF=3.5V for Devices of VBR≦50V and VF=5.0V Max. for Devices VBR>50V 20 100 - 55 to +175 - 55 to +175 Devices for Bipolar Applications 1. For Bidirectional use CA suffix ORDER INFORMATION (EXAMPLE) 1KSMB39A R5G Green compound code Packing code Part no. UNIT Watts Watts A Volts oC/W °C °C Document Number: DS_D1408012 Version: E15 CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10 PPPM, PEAK PULSE POWER, KW PEAK PULSE CURRENT (%) 1 1 10 100 1000 tp, PULSE WIDTH, (μs) 140 120 100 80 60 40 20 0 0 FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs Peak Value IPPM PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM Half Value-IPPM/2 10/1000μs, WAVEFORM as DEFINED by R.E.A. td 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms 10000 1000 FIG. 5 TYPICAL JUNCTION CAPACITANCE VR=0 100 f=1.0MHz Vsig=50mVp-p MEASURED at STAND-OFF VOLTAGE,Vwm 10 1 10 V(BR), BREAKDOWN VOLTAGE (V) 100 CJ, JUNCTION CAPACITANCE (pF) A IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) 1KSMB SERIES Taiwan Semiconductor FIG.2 PULSE DERATING CURVE 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (oC) FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 100 8.3ms Single Half Sine Wave 10 1 10 NUMBER OF CYCLES AT 60 Hz 100 Document Number: DS_D1408012 Version: E15 CREAT BY ART Device 1KSMB10A 1KSMB10CA 1KSMB11A 1KSMB11CA 1KSMB12A 1KSMB12CA 1KSMB13A 1KSMB13CA 1KSMB15A 1KSMB15CA 1KSMB16A 1KSMB16CA 1KSMB18A 1KSMB18CA 1KSMB20A 1KSMB20CA 1KSMB22A 1KSMB22CA 1KSMB24A 1KSMB24CA 1KSMB27A 1KSMB27CA 1KSMB30A 1KSMB30CA 1KSMB33A 1KSMB33CA 1KSMB36A 1KSMB36CA 1KSMB39A 1KSMB39CA 1KSMB43A 1KSMB43CA 1KSMB47A 1KSMB47CA 1KSMB51A 1KSMB51CA 1KSMB56A 1KSMB56CA 1KSMB62A 1KSMB62CA 1KSMB68A 1KSMB68CA 1KSMB75A 1KSMB75CA 1KSMB82A 1KSMB82CA Device Marking Code A10E N10E A10F N10F A10G N10G A10H N10H A10I N10I A10J N10J A10K N10K A10L N10L A10M N10M A10N N10N A10O N10O A10P N10P A10Q N10Q A10R N10R A10S N10S A10T N10T A10U N10U A10V N10V A10W N10W A10X N10X A10Y N10Y A10Z N10Z B10A O10A Breakdown Voltage VBR (V) (Note 1) Min Max 9.5 10.5 10.5 11.6 11.4 12.6 12.4 13.7 14.3 15.8 15.2 16.8 17.1 18.9 19.0 21.0 20.9 23.1 22.8 25.2 25.7 28.4 28.5 31.5 31.4 34.7 34.2 37.8 37.1 41.0 40.9 45.2 44.7 49.4 48.5 53.6 53.2 58.8 58.9 65.1 64.6 71.4 71.3 78.8 77.9 86.1 1KSMB SERIES Taiwan Semiconductor Test Current IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-Off Voltage VWM (V) Maximum Maximum Maximum Reverse Leakage Peak Pulse Clamping Voltage @ VWM ID (μA) Current IPPM (A) (Note 2) @ IPPM VC(V) 8.55 10.0 69.0 14.5 9.40 5.0 64.1 15.6 10.2 5.0 59.9 16.7 11.1 5.0 54.9 18.2 12.8 5.0 47.2 21.2 13.6 1.0 44.4 22.5 15.3 1.0 39.2 25.5 17.1 1.0 36.1 27.7 18.8 1.0 32.7 30.6 20.5 1.0 30.1 33.2 23.1 1.0 26.7 37.5 25.6 1.0 24.2 41.4 28.2 1.0 21.9 45.7 30.8 1.0 20.0 49.9 33.3 1.0 18.6 53.9 36.8 1.0 16.9 59.3 40.2 1.0 15.4 64.8 43.6 1.0 14.3 70.1 47.8 1.0 13.0 77.0 53.0 1.0 11.8 85.0 58.1 1.0 10.9 92.0 64.1 1.0 9.7 103 70.1 1.0 8.8 113 Document Number: DS_D1408012 Version: E15 CREAT BY ART 1KSMB SERIES Taiwan Semiconductor Device Device Marking Code 1KSMB91A 1KSMB91CA 1KSMB100A 1KSMB100CA B10B O10B B10C O10C Breakdown Voltage VBR (V) (Note 1) Min M.


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