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1KSMB91CA Dataheets PDF



Part Number 1KSMB91CA
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Transient Voltage Suppressor
Datasheet 1KSMB91CA Datasheet1KSMB91CA Datasheet (PDF)

1KSMB SERIES Taiwan Semiconductor CREAT BY ART 1000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified DO-214AA (SMB) MEC.

  1KSMB91CA   1KSMB91CA



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1KSMB SERIES Taiwan Semiconductor CREAT BY ART 1000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.11 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Peak power dissipation at TA=25°C, tp=1ms (Note 1) Steady state power dissipation PPK PD 1000 5 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2) VF 3.5 / 5.0 Typical thermal resistance RθJL RθJA Operating junction temperature range TJ Storage temperature range TSTG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2 Note 2: VF=3.5V for Devices of VBR≦50V and VF=5.0V Max. for Devices VBR>50V 20 100 - 55 to +175 - 55 to +175 Devices for Bipolar Applications 1. For Bidirectional use CA suffix ORDER INFORMATION (EXAMPLE) 1KSMB39A R5G Green compound code Packing code Part no. UNIT Watts Watts A Volts oC/W °C °C Document Number: DS_D1408012 Version: E15 CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10 PPPM, PEAK PULSE POWER, KW PEAK PULSE CURRENT (%) 1 1 10 100 1000 tp, PULSE WIDTH, (μs) 140 120 100 80 60 40 20 0 0 FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs Peak Value IPPM PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM Half Value-IPPM/2 10/1000μs, WAVEFORM as DEFINED by R.E.A. td 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms 10000 1000 FIG. 5 TYPICAL JUNCTION CAPACITANCE VR=0 100 f=1.0MHz Vsig=50mVp-p MEASURED at STAND-OFF VOLTAGE,Vwm 10 1 10 V(BR), BREAKDOWN VOLTAGE (V) 100 CJ, JUNCTION CAPACITANCE (pF) A IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) 1KSMB SERIES Taiwan Semiconductor FIG.2 PULSE DERATING CURVE 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (oC) FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 100 8.3ms Single Half Sine Wave 10 1 10 NUMBER OF CYCLES AT 60 Hz 100 Document Number: DS_D1408012 Version: E15 CREAT BY ART.


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