Document
1KSMB SERIES
Taiwan Semiconductor
CREAT BY ART
1000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability
- Fast response time: Typically less than 1.0ps from 0 volt to BV min
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified
DO-214AA (SMB)
MECHANICAL DATA
Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.11 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation at TA=25°C, tp=1ms (Note 1) Steady state power dissipation
PPK PD
1000 5
Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load
IFSM
100
Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2)
VF
3.5 / 5.0
Typical thermal resistance
RθJL RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2
Note 2: VF=3.5V for Devices of VBR≦50V and VF=5.0V Max. for Devices VBR>50V
20 100
- 55 to +175 - 55 to +175
Devices for Bipolar Applications
1. For Bidirectional use CA suffix
ORDER INFORMATION (EXAMPLE)
1KSMB39A R5G
Green compound code
Packing code Part no.
UNIT Watts Watts
A
Volts
oC/W °C °C
Document Number: DS_D1408012
Version: E15
CREAT BY ART RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE 100
NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3
10
PPPM, PEAK PULSE POWER, KW
PEAK PULSE CURRENT (%)
1 1 10 100 1000 tp, PULSE WIDTH, (μs)
140 120 100
80 60 40 20
0 0
FIG. 3 CLAMPING POWER PULSE WAVEFORM
tr=10μs
Peak Value IPPM
PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM
Half Value-IPPM/2 10/1000μs, WAVEFORM as DEFINED by R.E.A.
td
0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms
10000 1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE VR=0
100
f=1.0MHz Vsig=50mVp-p
MEASURED at STAND-OFF
VOLTAGE,Vwm
10 1
10 V(BR), BREAKDOWN VOLTAGE (V)
100
CJ, JUNCTION CAPACITANCE (pF) A
IFSM, PEAK FORWARD SURGE CURRENT (A)
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%)
1KSMB SERIES
Taiwan Semiconductor
FIG.2 PULSE DERATING CURVE 125 100
75 50 25
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (oC)
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY
100 8.3ms Single Half Sine Wave
10 1
10 NUMBER OF CYCLES AT 60 Hz
100
Document Number: DS_D1408012
Version: E15
CREAT BY ART.