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111RKI80 Dataheets PDF



Part Number 111RKI80
Manufacturers International Rectifier
Logo International Rectifier
Description PHASE CONTROL THYRISTORS
Datasheet 111RKI80 Datasheet111RKI80 Datasheet (PDF)

PHASE CONTROL THYRISTORS Features High current and high surge ratings dv/dt = 1000V/µs option Ceramic housing Threaded studs UNF 1/2 - 20UNF2A Types up to 1200V VRRM/VDRM di/dt = 300A/µs Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters 111RKI Units IT(AV) IT(RMS) ITSM I2t @ TC @ 50Hz @ 60Hz @ 50Hz @ 60Hz 110 90 172 2080 2180 21.7 19.8 A °C A A A KA2s KA2s VDRM/VRRM tq typical TJ 400 to 1200 110 - 40 to 140.

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PHASE CONTROL THYRISTORS Features High current and high surge ratings dv/dt = 1000V/µs option Ceramic housing Threaded studs UNF 1/2 - 20UNF2A Types up to 1200V VRRM/VDRM di/dt = 300A/µs Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters 111RKI Units IT(AV) IT(RMS) ITSM I2t @ TC @ 50Hz @ 60Hz @ 50Hz @ 60Hz 110 90 172 2080 2180 21.7 19.8 A °C A A A KA2s KA2s VDRM/VRRM tq typical TJ 400 to 1200 110 - 40 to 140 V µs °C Bulletin I25152/B 111RKI SERIES Stud Version 110A case style TO-209AC (TO-94) 111RKI Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 40 VDRM/VRRM, max. repetitive peak and off-state voltage V 400 111RKI 80 800 120 1200 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 IDRM/IRRM max. @ TJ = TJ max. mA 20 On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current I2t Maximum I2t for fusing I2√ t Maximum I2√t for fusing VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage IH Maximum holding current IL Typical latching current 111RKI 110 90 172 2080 2180 1750 1830 21.7 19.8 15.3 14.0 217 0.82 1.02 2.16 1.70 1.57 150 400 Units Conditions A 180° conduction, half sine wave °C DC @ 83°C case temperature t = 10ms No voltage 12 A t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, KA2s KA2√s t = 10ms No voltage t = 8.3ms reapplied Initial TJ = TJ max. t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V (I > π x IT(AV)),TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. mΩ (I > π x IT(AV)),TJ = TJ max. V Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse 2222222222222 mA TJ = 25°C, anode supply 6V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td Typical delay time tq Typical turn-off time 111RKI 300 1 110 Units Conditions A/µs µs Gate drive 20V, 20Ω, tr ≤ 1µs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 25Ω 111RKI Series Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 111RKI Series Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Gate Characteristics 111RKI Series Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 111RKI 500 20 Units Conditions V/µs TJ = TJ max. linear to 80% rated VDRM mA TJ = TJ max, rated VDRM/VRRM applied Triggering Parameter PGM PG(AV) IGM +VGM Maximum peak gate power Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required to trigger VGT DC gate voltage required to trigger IGD DC gate current not to trigger VGD DC gate voltage not to trigger 111RKI 12 3.0 3.0 20 10 TYP. 180 80 40 MAX. - 100 - 2.5 1.6 2 1- 6.0 0.25 Units Conditions W TJ = TJ max, tp ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms TJ = - 40°C mA TJ = 25°C TJ = 140°C TJ = - 40°C V TJ = 25°C TJ = 140°C mA V TJ = TJ max 23 Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter 111RKI Units Conditions TJ Tstg RthJC RthCS Max. operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink -40 to 140 -40 to 150 0.27 0.1 °C K/W DC operation Mounting surface, smooth, flat and greased T Mounting torque, ± 10% 15.5 Non lubricated threads (137) 14 Nm (lbf-in) Lubricated threads (120) wt Approximate weight 130 g Case style TO - 209AC (TO-94) See Outline Table 111RKI Series ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 180° 120° 90° 60° 30° 0.043 0.052 0.066 0.096 0.167 0.031 0.053 0.071 0.101 0.169 K/W TJ = TJ max. Ordering Information Table Device Code 11 1 RKI 120 1 23 1 - IT(AV) rated average output current (rounded/10) 2 - 0 = Eyelet term.


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