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111RKI40PBF Dataheets PDF



Part Number 111RKI40PBF
Manufacturers Vishay
Logo Vishay
Description Phase Control Thyristors
Datasheet 111RKI40PBF Datasheet111RKI40PBF Datasheet (PDF)

110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY IT(AV) 110 A FEATURES • High current and high surge ratings • Hermetic ceramic housing • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IT(RMS) ITSM I2t VDR.

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110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY IT(AV) 110 A FEATURES • High current and high surge ratings • Hermetic ceramic housing • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IT(RMS) ITSM I2t VDRM/VRRM tq TJ TC 50 Hz 60 Hz 50 Hz 60 Hz Typical ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 110RKI 111RKI 40 80 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 VALUES 110 90 172 2080 2180 21.7 19.8 400 to 1200 110 - 40 to 140 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1300 UNITS A °C A kA2s V μs °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 20 Document Number: 94379 Revision: 04-Nov-09 For technical questions, contact: [email protected] www.vishay.com 1 110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL TEST CONDITIONS 180° conduction, half sine wave DC at 83 °C case temperature t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms t = 8.3 ms 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 6 V resistive load VALUES 110 90 172 2080 2180 1750 1830 21.7 19.8 15.3 14.0 217 0.82 1.02 2.16 1.70 1.57 200 400 UNITS A °C A kA2s kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs VR = 50 V, dV/dt = 20 V/μs, gate 0 V 25 Ω VALUES UNITS 300 A/μs 1 μs 110 BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum rated VDRM/VRRM applied VALUES UNITS 500 V/μs 20 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94379 Revision: 04-Nov-09 110RKI...PbF, 111RKI...PbF Series Phase Control Thyristors Vishay High Power Products (Stud Version), 110 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C TJ = 25 °C TJ = 140 °C TJ = - 40 °C TJ = 25 °C TJ = 140 °C TJ = TJ maximum Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied VALUES TYP. MAX. 12 3.0 3.0 20 10 180 80 120 40 2.5 1.6 2 1- 6.0 0.25 UNITS W A V mA V mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum operating junction temperature range TJ Maximum storage temperature range Maximum thermal resistance, junction to case TStg RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased Mounting torque, ± 10 % Non-lubricated threads Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet VALUES UNITS - 40 to 140 - 40 to 150 °C 0.27 K/W 0.1 15.5 (137) 14 (120) N·m (lbf · in) 130 g TO-209AC (TO-94) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS 180° 0.043 0.031 120° 0.052 0..


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