Sensitive Gate Silicon Controlled Rectifiers
CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol ○ 3. Anode
▼
○ 2.Gate 1.Cathode ○
BVDRM = 600V IT(RMS) = 1...
Description
CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol ○ 3. Anode
▼
○ 2.Gate 1.Cathode ○
BVDRM = 600V IT(RMS) = 1.0A ITSM = 10A
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.))
General Description
TO-92
1 2 3
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits.
We supply IGT=30㎂~100㎂ level products for customer's special requirement.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM IT(AV) IT(RMS)
ITSM I2t
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing
sine wave,50 to 60Hz half sine wave : TC = 83 °C All Conduction Angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms
t = 8.3ms
PGM PG(AV) IFGM VRGM
TJ TSTG
Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
TA = 25 °C, pulse width ≤ 1.0㎲
TA = 25 °C, t = 8.3ms
TA = 25 °C, pulse width ≤ 1.0㎲ TA = 25 °C, pulse width ≤ 1.0㎲
Ratings
600 0.5 1.0
10
0.415 2 0.1 1 5.0
- 40 ~ 110 - 40 ~ 150
Units
V A A
A
A2s W W A V °C °C
April, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
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CR100-8
Electrical Characteristics ( T...
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