Controlled Rectifiers. CR100-8 Datasheet

CR100-8 Rectifiers. Datasheet pdf. Equivalent


Part CR100-8
Description Sensitive Gate Silicon Controlled Rectifiers
Feature CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 3. Anode ▼ ○ 2.Gate 1.Cathode ○ BVDR.
Manufacture Apollo Electron
Datasheet
Download CR100-8 Datasheet


CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol CR100-8 Datasheet
Recommendation Recommendation Datasheet CR100-8 Datasheet




CR100-8
CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol
3. Anode
2.Gate
1.Cathode
BVDRM = 600V
IT(RMS) = 1.0A
ITSM = 10A
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 1.0 A )
Low On-State Voltage (1.3V(Typ.))
General Description
TO-92
1
2
3
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as
small motor control, gate driver for large thyristor, sensing and detecting circuits.
We supply IGT=30㎂~100level products for customer's special requirement.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz
half sine wave : TC = 83 °C
All Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width 1.0
TA = 25 °C, t = 8.3ms
TA = 25 °C, pulse width 1.0
TA = 25 °C, pulse width 1.0
Ratings
600
0.5
1.0
10
0.415
2
0.1
1
5.0
- 40 ~ 110
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
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CR100-8
CR100-8
Electrical Characteristics ( Tj = 25 °C unless otherwise noted )
Symbol
Items
IDRM
VTM
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
IGT Gate Trigger Current (2)
Conditions
Ratings
Min. Typ. Max.
Unit
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 110°C
10
100
( ITM = 1 A, Peak )
1.3 1.7
V
VAK = 12 V, RL=100 Ω
--
200 ㎂
VGT Gate Trigger Voltage (2)
VD =12 V, RL=100 Ω
-- --
0.8 V
VGD
dv/dt
Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω
Critical Rate of Rise Off-State
Voltage
Tj = 125 °C
0.2
10
Critical Rate of Rise On-State
di/dt Voltage
ITM = 2A ; Ig = 10mA
IH Holding Current
VAK = 12 V, Gate Open
Initiating Curent = 20mA
---
── V
-- --
v/
50 A/
0.8 10 mA
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
─ ─ 60 °C/W
─ ─ 150 °C/W
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