DatasheetsPDF.com

CR100-8 Dataheets PDF



Part Number CR100-8
Manufacturers Apollo Electron
Logo Apollo Electron
Description Sensitive Gate Silicon Controlled Rectifiers
Datasheet CR100-8 DatasheetCR100-8 Datasheet (PDF)

CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 3. Anode ▼ ○ 2.Gate 1.Cathode ○ BVDRM = 600V IT(RMS) = 1.0A ITSM = 10A Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.)) General Description TO-92 1 2 3 Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. We s.

  CR100-8   CR100-8



Document
CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 3. Anode ▼ ○ 2.Gate 1.Cathode ○ BVDRM = 600V IT(RMS) = 1.0A ITSM = 10A Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.)) General Description TO-92 1 2 3 Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. We supply IGT=30㎂~100㎂ level products for customer's special requirement. Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified ) Symbol Parameter Condition VDRM IT(AV) IT(RMS) ITSM I2t Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing sine wave,50 to 60Hz half sine wave : TC = 83 °C All Conduction Angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms t = 8.3ms PGM PG(AV) IFGM VRGM TJ TSTG Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature TA = 25 °C, pulse width ≤ 1.0㎲ TA = 25 °C, t = 8.3ms TA = 25 °C, pulse width ≤ 1.0㎲ TA = 25 °C, pulse width ≤ 1.0㎲ Ratings 600 0.5 1.0 10 0.415 2 0.1 1 5.0 - 40 ~ 110 - 40 ~ 150 Units V A A A A2s W W A V °C °C April, 2010. Rev.1 copyright @ Apollo Electron Co., Ltd. All rights reserved. 1/5 CR100-8 Electrical Characteristics ( Tj = 25 °C unless otherwise noted ) Symbol Items IDRM VTM Repetitive Peak Off-State Current Peak On-State Voltage (1) IGT Gate Trigger Current (2) Conditions Ratings Min. Typ. Max. Unit VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 110°C ─ ─ ─ 10 ㎂ ─ 100 ( ITM = 1 A, Peak ) ─ 1.3 1.7 V VAK = 12 V, RL=100 Ω ─ -- 200 ㎂ VGT Gate Trigger Voltage (2) VD =12 V, RL=100 Ω -- -- 0.8 V VGD dv/dt Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω Critical Rate of Rise Off-State Voltage Tj = 125 °C 0.2 10 Critical Rate of Rise On-State di/dt Voltage ITM = 2A ; Ig = 10mA ─ IH Holding Current VAK = 12 V, Gate Open Initiating Curent = 20mA --- ── V -- -- v/㎲ ─ 50 A/㎲ 0.8 10 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance Junction to case Junction to Ambient ─ ─ 60 °C/W ─ ─ 150 °C/W 2/5 Gate Voltage [V] Fig 1. Gate Characteristics 101 100 25oC VGM(5V) PGM(2W) PG(AV)(0.1W) 10-1 100 VGD(0.2V) 101 102 Gate Current [mA] 103 Fig 3. Typical Forward Voltage 101 104 100 125oC 10-1 0.5 25oC 1.0 1.5 2.0 On-State Voltage [V] 2.5 Fig 5. Typical Gate Trigger Voltage vs. 10 IGM(1A) Max. Allowable Case Temperature [ oC] Transient Thermal Impedance [ oC/W] CR100-8 Fig 2. Maximum Case Temperature 140 120 100 80 60 π 2π θ 40 360° 20 θ : Conduction Angl e 0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] θ = 180o 0.5 0.6 Fig 4. Thermal Response 103 Rθ (J-C) 102 101 100 10-2 10-1 100 101 Time (sec) 102 Fig 6. Typical Gate Tri.


HCR100 CR100-8 M40SZ100W


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)