Document
CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol ○ 3. Anode
▼
○ 2.Gate 1.Cathode ○
BVDRM = 600V IT(RMS) = 1.0A ITSM = 10A
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.))
General Description
TO-92
1 2 3
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits.
We supply IGT=30㎂~100㎂ level products for customer's special requirement.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM IT(AV) IT(RMS)
ITSM I2t
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing
sine wave,50 to 60Hz half sine wave : TC = 83 °C All Conduction Angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms
t = 8.3ms
PGM PG(AV) IFGM VRGM
TJ TSTG
Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
TA = 25 °C, pulse width ≤ 1.0㎲
TA = 25 °C, t = 8.3ms
TA = 25 °C, pulse width ≤ 1.0㎲ TA = 25 °C, pulse width ≤ 1.0㎲
Ratings
600 0.5 1.0
10
0.415 2 0.1 1 5.0
- 40 ~ 110 - 40 ~ 150
Units
V A A
A
A2s W W A V °C °C
April, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/5
CR100-8
Electrical Characteristics ( Tj = 25 °C unless otherwise noted )
Symbol
Items
IDRM VTM
Repetitive Peak Off-State Current
Peak On-State Voltage (1)
IGT Gate Trigger Current (2)
Conditions
Ratings Min. Typ. Max.
Unit
VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 110°C
─ ─
─ 10 ㎂
─ 100
( ITM = 1 A, Peak )
─ 1.3 1.7
V
VAK = 12 V, RL=100 Ω
─ --
200 ㎂
VGT Gate Trigger Voltage (2)
VD =12 V, RL=100 Ω
-- --
0.8 V
VGD dv/dt
Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω
Critical Rate of Rise Off-State Voltage
Tj = 125 °C
0.2
10
Critical Rate of Rise On-State
di/dt Voltage
ITM = 2A ; Ig = 10mA
─
IH Holding Current
VAK = 12 V, Gate Open Initiating Curent = 20mA
---
── V
-- --
v/㎲
─ 50 A/㎲
0.8 10 mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
Junction to case Junction to Ambient
─ ─ 60 °C/W ─ ─ 150 °C/W
2/5
Gate Voltage [V]
Fig 1. Gate Characteristics
101
100 25oC
VGM(5V)
PGM(2W) PG(AV)(0.1W)
10-1 100
VGD(0.2V)
101 102
Gate Current [mA]
103
Fig 3. Typical Forward Voltage
101
104
100 125oC
10-1 0.5
25oC
1.0 1.5 2.0
On-State Voltage [V]
2.5
Fig 5. Typical Gate Trigger Voltage vs.
10
IGM(1A) Max. Allowable Case Temperature [ oC]
Transient Thermal Impedance [ oC/W]
CR100-8
Fig 2. Maximum Case Temperature
140
120
100
80
60 π 2π θ
40 360°
20 θ : Conduction Angl e
0 0.0 0.1 0.2 0.3 0.4
Average On-State Current [A]
θ = 180o
0.5 0.6
Fig 4. Thermal Response
103
Rθ (J-C) 102
101
100 10-2
10-1
100 101
Time (sec)
102
Fig 6. Typical Gate Tri.