SUN0550F

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.23Ω (Typ.)  Low gate charge: Qg=10.5nC (Typ.)  Low reverse transfer capacitance: Crss=2pF (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SUN0550F SUN0550 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SU△ΔNY0YM5MD5DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) △YMDD -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction temperature Rating 500 30 4.5 2.85 18 281 4.5 2.9 29 150 -55~150 Unit V V A A A mJ A mJ W C C Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr 1 of 8 Thermal Characteristics Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) SUN0550F Rating Max. 4.27 Max. 62.5 Unit C/W Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Drain-so...