XX1010-QT
Doubler 14.625-15.0/29.25-30 GHz
Features
Integrated Gain, Doubler and Driver Stages +4.5 V Single Positive Bias Integrated Bypassing Capacitor +20 dBm Output Saturated Power 30 dBc Fundamental Suppression On-Chip ESD Protection 100% RF, DC and Output Power Testing Lead-Free 3 mm 16-Lead QFN Package RoHS* Compliant and 260°C Reflow Compatible
Description
The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components.
This device uses InGaAs pHEMT device technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The XX1010-QT has integrated ESD structures for protection and comes in a low cost 3 mm QFN package.
The device.