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Part Number XX1010-QT
Manufacturers MA-COM
Logo MA-COM
Description Doubler
Datasheet XX1010-QT DatasheetXX1010-QT Datasheet (PDF)

  XX1010-QT   XX1010-QT
XX1010-QT Doubler 14.625-15.0/29.25-30 GHz Features  Integrated Gain, Doubler and Driver Stages  +4.5 V Single Positive Bias  Integrated Bypassing Capacitor  +20 dBm Output Saturated Power  30 dBc Fundamental Suppression  On-Chip ESD Protection  100% RF, DC and Output Power Testing  Lead-Free 3 mm 16-Lead QFN Package  RoHS* Compliant and 260°C Reflow Compatible Description The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses InGaAs pHEMT device technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XX1010-QT has integrated ESD structures for protection and comes in a low cost 3 mm QFN package. The device.



SB10100FCT XX1010-QT SDB20100PR


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