XX1010-QT

XX1010-QT Doubler 14.625-15.0/29.25-30 GHz Features  Integrated Gain, Doubler and Driver Stages  +4.5 V Single Positive Bias  Integrated Bypassing Capacitor  +20 dBm Output Saturated Power  30 dBc Fundamental Suppression  On-Chip ESD Protection  100% RF, DC and Output Power Testing  Lead-Free 3 mm 16-Lead QFN Package  RoHS* Compliant and 260°C Reflow Compatible Description The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses InGaAs pHEMT device technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XX1010-QT has integrated ESD structures for protection and comes in a low cost 3 mm QFN package. The device is well suited for millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number XX1010-QT-0G00 XX1010-QT-0G0T XX1010-QT-EV1 Package Bulk Quantity 1000 Piece Reel Evaluation Board Functional Block Diagram Rev. V3 Pin Configuration1 Pin No. Function 1,4,5,6,7,8 2,11 3 9,12,14,15,16 10 13 No Connection Ground RF Input No Connection RF Output Vd 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restric...