SILICON EPITAXIAL PLANAR ZENER DIODES
BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features • Very sharp reverse characteristic • Low reverse current l...
Description
BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise
LS-34
Applications Voltage stabilization
QuadroMELF Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Power Dissipation Z-Current Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward Voltage at IF = 100 mA
Symbol
Ptot IZ Tj TS
Value 500
Ptot / VZ 175
- 65 to + 175
Unit mW mA OC OC
Symbol RthJA
VF
Max. 500
1.5
Unit K/W
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/01/2007
BZT55 Series
Zener Voltage Range 1)
Dynamic Resistance
Reverse Leakage Current
Type
lZT for
VZT
rzjT rzjK at IZK Ta = 25 OC Ta = 150 OC
mA V
Ω Ω mA µA
µA
BZT55C2V4
5
2.28...2.56
< 85
< 600
1
< 50
< 100
BZT55C2V7
5
2.5...2.9
< 85
< 600
1
< 10
< 50
BZT55C3V0
5
2.8...3.2
< 90
< 600
1
<4
< 40
BZT55C3V3
5
3.1...3.5
< 90
< 600
1
<2
< 40
BZT55C3V6
5
3.4...3.8
< 90
< 600
1
<2
< 40
BZT55C3V9
5
3.7...4.1
< 90
< 600
1
<2
< 40
BZT55C4V3
5
4.0...4.6
< 90
< 600
1
<1
< 20
BZT55C4V7
5
4.4...5.0
< 80
< 600
1
< 0.5
< 10
BZT55C5V1
5
4.8...5.4
< 60
< 550
1
< 0.1
<2
BZT55C5V6
5
5.2...6.0
< 4...
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