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BZT55B36 Dataheets PDF



Part Number BZT55B36
Manufacturers SEMTECH
Logo SEMTECH
Description SILICON EPITAXIAL PLANAR ZENER DIODES
Datasheet BZT55B36 DatasheetBZT55B36 Datasheet (PDF)

BZT55 Series SILICON EPITAXIAL PLANAR ZENER DIODES Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 m.

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BZT55 Series SILICON EPITAXIAL PLANAR ZENER DIODES Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward Voltage at IF = 100 mA Symbol Ptot IZ Tj TS Value 500 Ptot / VZ 175 - 65 to + 175 Unit mW mA OC OC Symbol RthJA VF Max. 500 1.5 Unit K/W V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/01/2007 BZT55 Series Zener Voltage Range 1) Dynamic Resistance Reverse Leakage Current Type lZT for VZT rzjT rzjK at IZK Ta = 25 OC Ta = 150 OC mA V Ω Ω mA µA µA BZT55C2V4 5 2.28...2.56 < 85 < 600 1 < 50 < 100 BZT55C2V7 5 2.5...2.9 < 85 < 600 1 < 10 < 50 BZT55C3V0 5 2.8...3.2 < 90 < 600 1 <4 < 40 BZT55C3V3 5 3.1...3.5 < 90 < 600 1 <2 < 40 BZT55C3V6 5 3.4...3.8 < 90 < 600 1 <2 < 40 BZT55C3V9 5 3.7...4.1 < 90 < 600 1 <2 < 40 BZT55C4V3 5 4.0...4.6 < 90 < 600 1 <1 < 20 BZT55C4V7 5 4.4...5.0 < 80 < 600 1 < 0.5 < 10 BZT55C5V1 5 4.8...5.4 < 60 < 550 1 < 0.1 <2 BZT55C5V6 5 5.2...6.0 < 40 < 450 1 < 0.1 <2 BZT55C6V2 5 5.8...6.6 < 10 < 200 1 < 0.1 <2 BZT55C6V8 5 6.4...7.2 < 8 < 150 1 < 0.1 <2 BZT55C7V5 5 7.0...7.9 < 7 < 50 1 < 0.1 <2 BZT55C8V2 5 7.7...8.7 < 7 < 50 1 BZT55C9V1 2) 5 8.5...9.6 < 10 < 50 1 BZT55C10 2) 5 9.4...10.6 < 15 < 70 1 BZT55C11 2) 5 10.4...11.6 < 20 < 70 1 BZT55C12 2) 5 11.4...12.7 < 20 < 90 1 BZT55C13 2) 5 12.4...14.1 < 26 < 110 1 BZT55C15 2) 5 13.8...15.6 < 30 < 110 1 BZT55C16 2) 5 15.3...17.1 < 40 < 170 1 BZT55C18 2) 5 16.8...19.1 < 50 < 170 1 BZT55C20 2) 5 18.8...21.2 < 55 < 220 1 BZT55C22 2) 5 20.8...23.3 < 55 < 220 1 BZT55C24 2) 5 22.8...25.6 < 80 < 220 1 BZT55C27 2) 5 25.1...28.9 < 80 < 220 1 BZT55C30 2) 5 28...32 < 80 < 220 1 BZT55C33 2) 5 31...35 < 80 < 220 1 BZT55C36 2) 5 34...38 < 80 < 220 1 BZT55C39 2) 2.5 37...41 < 90 < 500 0.5 BZT55C43 2) 2.5 40...46 < 90 < 600 0.5 BZT55C47 2) 2.5 44...50 < 110 < 700 0.5 BZT55C51 2) 2.5 48...54 < 125 < 700 0.5 BZT55C56 2) 2.5 52...60 < 135 < 1000 0.5 BZT55C62 2) 2.5 58...66 < 150 < 1000 0.5 BZT55C68 2) 2.5 64…72 < 200 < 1000 0.5 BZT55C75 2) 2.5 70…79 < 250 < 1500 0.5 1) Tested with pulses tp = 20 ms. 2) Additional measurement of Voltage group 9V1 to 75 at 95% Vzmin ≤ 35 nA < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 <2 <2 <2 <2 <2 <2 .


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