LL4148

LL4148 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 µs VRM VR IF(AV) IFSM Power Dissipation Junction Temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature. Ptot Tj TS Value 100 75 200 0.5 1 4 500 1) 175 - 65 to + 175 Unit V V mA A mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/09/2007 LL4148 Characteristics at Tj = 25 OC Parameter Symbol Forward Voltage at IF = 10 mA VF Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 µA Pulses IR IR IR V(BR)R Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Ctot Vfr Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air trr RthA Rectification Efficiency at f = 100 MHz, VRF = 2 V ηV 1) Valid provided that electrodes are kept at ambient temperature. Min. - 100 - - 0.45 Max. 1 Unit V 25 nA 5 µA 50 µA -V 4 pF 2.5 V 4 0.35 1) - ns K/mW - 60 VRF =2V 2nF 5K Vo ...