SSH70N10A

Advanced Power MOSFET SSH70N10A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O2 O1 O1 O3 Total Power Dissipation (TC=25 ΟC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8”from case for 5-seconds BVDSS = 100 V RDS(on) = 0.023 Ω ID = 70 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Value 100 70 49.2 280 +_ 20 1633 70 30 6.5 300 2.0 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W/ ΟC ΟC Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- 0.24 -- Max. 0.5 -40 Units ΟC /W Rev. B ©1999 Fairchild Semiconductor Corporation SSH70N10A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25ΟC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp...