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SSH8N80A
N-CHANNEL POWER MOSFET
Description
N-CHANNEL POWER MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 800V Lower RDS(ON): 1.000Ω (Typ.) ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drai...
Fairchild Semiconductor
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