BD751

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A ·High Power Dissipation ·Complement to Type BD750/750A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751 100 VCEV Collector-Emitter Voltage V BD751A 130 BD751 90 VCEO(SUS) Collector-Emitter Voltage V BD751A 120 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD751/751A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751 BD751A IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751 IC= 7.5A; IB= 0.75A BD751A IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage BD751 IC= 7.5A; IB= 0.75A BD751A IC= 5A; IB= 0.5A ICEV Collector Cutoff Current BD751 VCEV= 100V;VBE(off)= 1.5V BD751A VCEV= 130V;VBE(off)= 1.5V IEBO Emitter Cutoff Current ...