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VS-25CTQ040-N3 Dataheets PDF



Part Number VS-25CTQ040-N3
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-25CTQ040-N3 DatasheetVS-25CTQ040-N3 Datasheet (PDF)

VS-25CTQ...PbF Series, VS-25CTQ...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A Base 2 common cathode TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 15 A 25 V, 40 V, 45 V 0.50 V 70 mA at 125 °C 150 °C Common cathode 20 mJ FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanc.

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VS-25CTQ...PbF Series, VS-25CTQ...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A Base 2 common cathode TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 15 A 25 V, 40 V, 45 V 0.50 V 70 mA at 125 °C 150 °C Common cathode 20 mJ FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-25CTQ... center tap Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM Rectangular waveform Range tp = 5 μs sine VF 15 Apk, TJ = 125 °C (per leg) TJ Range VALUES 30 35 to 45 990 0.50 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL VS25CTQ035PbF VS25CTQ035-N3 VS25CTQ040PbF VS25CTQ040-N3 VS25CTQ045PbF VS25CTQ045-N3 UNITS Maximum DC reverse voltage VR Maximum working 35 35 40 40 45 45 V peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS Repetitive avalanche current per leg IAR TEST CONDITIONS VALUES UNITS 50 % duty cycle at TC = 102 °C, rectangular waveform 30 A 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 990 250 20 3 A mJ A Revision: 26-Aug-11 1 Document Number: 94173 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25CTQ...PbF Series, VS-25CTQ...-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop per leg See fig. 1 VFM (1) Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TEST CONDITIONS 15 A 30 A TJ = 25 °C 15 A 30 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.56 0.71 0.50 0.64 1.75 70 900 8.0 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink RthJC DC operation See fig. 4 DC operation RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style TO-220AB VALUES - 55 to 150 UNITS °C 3.25 1.63 °C/W 0.50 2.0 g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf· in) 25CTQ035 25CTQ040 25CTQ045 Revision: 26-Aug-11 2 Document Number: 94173 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) VS-25CTQ...PbF Series, VS-25CTQ...-N3 Series www.vishay.com Vishay Semiconductors 1000 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 1000 IR - Reverse Current (mA) 1000 100 10 1 0.1 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C 0.01 0.001 0 TJ = 25 °C 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Impedance (°C/W) 10 1 0.1 0.01 0.001 .


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