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VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
TO-263AB (D2PAK)
TO-262AA
Base common cathode
2
Base common cathode
2
2 1 Common 3 Anode cathode Anode
VS-30CTQ...SPbF
2 1 Common 3 Anode cathode Anode
VS-30CTQ...-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
2 x 15 A
VR 80 V to 100 V
VF at IF
0.67 V
IRM 7 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS 7.5 mJ
FEATURES
• 175 °C TJ operation • Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 15 Apk, TJ = 125 °C (per leg) Range
VALUES 30
80/100 850 0.67
-55 to 175
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL
VR VRWM
VS-30CTQ080SPbF VS-30CTQ100SPbF VS-30CTQ080-1PbF VS-30CTQ100-1PbF
80 100
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current, see fig. 5
per device per leg
IF(AV)
Maximum peak one cycle non-repetitive surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg Repetitive avalanche current per leg
EAS IAR
TEST CONDITIONS
50 % duty cycle at TC = 129 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 30 15 850 275 7.50
0.50
UNITS
A
mJ A
Revision: 08-Dec-14
1 Document Number: 94193
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg See fig. 1
VFM (1)
Maximum reverse leakage current per leg See fig. 2
Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change
Note (1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT LS dV/dt
TEST CONDITIONS
15 A 30 A
TJ = 25 °C
15 A 30 A
TJ = 125 °C
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.86 1.05 0.67 0.82 0.55 7.0 500 8.0
10 000
UNITS
V
mA pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
RthJC
DC operation
Typical thermal resistance, case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque Marking device
minimum maximum
Case style TO-263AB (D2PAK) Case style TO-262AA
VALUES -55 to +175
UNITS °C
3.25 °C/W
1.63
0.50
2g
0.07 oz.
6 (5) 12 (10)
kgf cm (lbf in)
30CTQ100S
30CTQ100-1
Revision: 08-Dec-14
2 Document Number: 94193
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
Vishay Semiconductors
1000
100
TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C
1 0 0.5 1.0 1.5 2.0 2.5
VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
IR - Reverse Current (mA)
100 TJ = 175 °C
10 TJ = 150 °C
1 TJ = 125 °C
TJ = 100 °C 0.1
0.01
0.001
0.0001 0
TJ = 75 °C TJ = 50 °C TJ = 25 °C
20 40
60
80 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
TJ = 25°C
ZthJC - Thermal Impedance (°C/W)
100 0
20 40 60 80 100
VR - .