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VS-30CTQ100-1PbF Dataheets PDF



Part Number VS-30CTQ100-1PbF
Manufacturers Vishay
Logo Vishay
Description High Performance Schottky Rectifier
Datasheet VS-30CTQ100-1PbF DatasheetVS-30CTQ100-1PbF Datasheet (PDF)

www.vishay.com VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A TO-263AB (D2PAK) TO-262AA Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-30CTQ...SPbF 2 1 Common 3 Anode cathode Anode VS-30CTQ...-1PbF PRODUCT SUMMARY Package TO-263AB (D2PAK), TO-262AA IF(AV) 2 x 15 A VR 80 V to 100 V VF at IF 0.67 V IRM 7 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 7.5 mJ FEATURES.

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www.vishay.com VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A TO-263AB (D2PAK) TO-262AA Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-30CTQ...SPbF 2 1 Common 3 Anode cathode Anode VS-30CTQ...-1PbF PRODUCT SUMMARY Package TO-263AB (D2PAK), TO-262AA IF(AV) 2 x 15 A VR 80 V to 100 V VF at IF 0.67 V IRM 7 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 7.5 mJ FEATURES • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 15 Apk, TJ = 125 °C (per leg) Range VALUES 30 80/100 850 0.67 -55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30CTQ080SPbF VS-30CTQ100SPbF VS-30CTQ080-1PbF VS-30CTQ100-1PbF 80 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current, see fig. 5 per device per leg IF(AV) Maximum peak one cycle non-repetitive surge current per leg, see fig. 7 IFSM Non-repetitive avalanche energy per leg Repetitive avalanche current per leg EAS IAR TEST CONDITIONS 50 % duty cycle at TC = 129 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 0.50 A, L = 60 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 30 15 850 275 7.50 0.50 UNITS A mJ A Revision: 08-Dec-14 1 Document Number: 94193 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop per leg See fig. 1 VFM (1) Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TEST CONDITIONS 15 A 30 A TJ = 25 °C 15 A 30 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.86 1.05 0.67 0.82 0.55 7.0 500 8.0 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage  temperature range TJ, TStg Maximum thermal resistance,  junction to case per leg Maximum thermal resistance,  junction to case per package RthJC DC operation Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque Marking device minimum maximum Case style TO-263AB (D2PAK) Case style TO-262AA VALUES -55 to +175 UNITS °C 3.25 °C/W 1.63 0.50 2g 0.07 oz. 6 (5) 12 (10) kgf cm (lbf in) 30CTQ100S 30CTQ100-1 Revision: 08-Dec-14 2 Document Number: 94193 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series Vishay Semiconductors 1000 100 TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C 1 0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 1000 IR - Reverse Current (mA) 100 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 0.01 0.001 0.0001 0 TJ = 75 °C TJ = 50 °C TJ = 25 °C 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) TJ = 25°C ZthJC - Thermal Impedance (°C/W) 100 0 20 40 60 80 100 VR - .


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