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VS-80CPU02-N3 Dataheets PDF



Part Number VS-80CPU02-N3
Manufacturers Vishay
Logo Vishay
Description Ultrafast Rectifier
Datasheet VS-80CPU02-N3 DatasheetVS-80CPU02-N3 Datasheet (PDF)

www.vishay.com VS-80CPU02-F3, VS-80CPU02-N3 Vishay Semiconductors Ultrafast Rectifier, 2 x 40 A FRED Pt® Base common cathode 2 TO-247AC 13 Anode 1 2 Anode 2 Common cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-247AC 2 x 40 A 200 V 1.02 V 34 ns 175 °C Common cathode FEATURES • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC • Designed and .

  VS-80CPU02-N3   VS-80CPU02-N3



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www.vishay.com VS-80CPU02-F3, VS-80CPU02-N3 Vishay Semiconductors Ultrafast Rectifier, 2 x 40 A FRED Pt® Base common cathode 2 TO-247AC 13 Anode 1 2 Anode 2 Common cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-247AC 2 x 40 A 200 V 1.02 V 34 ns 175 °C Common cathode FEATURES • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTIONS/APPLICATIONS VS-80CPU02... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of welding, SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak reverse voltage Average rectified forward current per leg total device VRRM IF(AV) Non-repetitive peak surge current per leg Operating junction and storage temperatures IFSM TJ, TStg TEST CONDITIONS TC = 145 °C TJ = 25 °C MAX. 200 40 80 330 - 65 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA IF = 40 A Forward voltage IF = 40 A, TJ = 150 °C VF IF = 80 A IF = 80 A, TJ = 150 °C Reverse leakage current VR = VR rated IR TJ = 150 °C, VR = VR rated Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body MIN. 200 - TYP. - 0.94 0.80 1.07 0.97 120 3.5 MAX. UNITS - 1.02 0.90 1.20 1.08 5 500 - V μA pF nH Revision: 30-Sep-11 1 Document Number: 93457 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-80CPU02-F3, VS-80CPU02-N3 Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Reverse recovery time Peak recovery current Reverse recovery charge trr IRRM Qrr IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 40 A dIF/dt = - 200 A/μs VR = 200 V TJ = 125 °C - 34 - 33 - 54 - 3.4 -8 - 56 - 216 MAX. - UNITS ns A nC THERMAL - MECHAN.


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