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VS-80CPU02-F3, VS-80CPU02-N3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 40 A FRED Pt®
Base common cathode
2
TO-247AC
13
Anode 1
2
Anode 2
Common
cathode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF trr typ. TJ max. Diode variation
TO-247AC 2 x 40 A 200 V 1.02 V 34 ns 175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTIONS/APPLICATIONS
VS-80CPU02... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.
These devices are intended for use in the output rectification stage of welding, SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage Average rectified forward current
per leg total device
VRRM IF(AV)
Non-repetitive peak surge current per leg Operating junction and storage temperatures
IFSM TJ, TStg
TEST CONDITIONS
TC = 145 °C TJ = 25 °C
MAX. 200 40 80 330 - 65 to 175
UNITS V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA IF = 40 A
Forward voltage
IF = 40 A, TJ = 150 °C VF
IF = 80 A
IF = 80 A, TJ = 150 °C
Reverse leakage current
VR = VR rated IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
200
-
TYP.
-
0.94 0.80 1.07 0.97
120 3.5
MAX. UNITS
-
1.02 0.90 1.20 1.08
5 500
-
V
μA pF nH
Revision: 30-Sep-11
1 Document Number: 93457
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-80CPU02-F3, VS-80CPU02-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time Peak recovery current Reverse recovery charge
trr IRRM Qrr
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C
IF = 40 A dIF/dt = - 200 A/μs VR = 200 V
TJ = 125 °C
- 34 - 33 - 54 - 3.4 -8 - 56 - 216
MAX. -
UNITS ns
A nC
THERMAL - MECHAN.