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VS-MBR4060WT-N3 Dataheets PDF



Part Number VS-MBR4060WT-N3
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-MBR4060WT-N3 DatasheetVS-MBR4060WT-N3 Datasheet (PDF)

www.vishay.com VS-MBR4060WTPbF, VS-MBR4060WT-N3 Vishay Semiconductors Schottky Rectifier, 2 x 20 A Base common cathode 2 TO-247AC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS 13 Anode 1 2 Anode 2 Common cathode TO-247AC 2 x 20 A 60 V 0.62 V 100 mA at 125 °C 150 °C Common cathode 13 mJ FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical s.

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www.vishay.com VS-MBR4060WTPbF, VS-MBR4060WT-N3 Vishay Semiconductors Schottky Rectifier, 2 x 20 A Base common cathode 2 TO-247AC PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS 13 Anode 1 2 Anode 2 Common cathode TO-247AC 2 x 20 A 60 V 0.62 V 100 mA at 125 °C 150 °C Common cathode 13 mJ FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-MBR4060WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 20 Apk, TJ = 125 °C (per leg) Range VALUES 40 60 1020 0.62 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBR4060WTPbF 60 VS-MBR4060WT-N3 60 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current per leg per device IF(AV) TEST CONDITIONS TC = 108 °C, 50 % duty cycle, rectangular waveform VALUES 20 40 Maximum peak one cycle non-repetitive surge current per leg 5 µs sine or 3 µs rect. pulse Following any rated 1020 IFSM load condition and with 10 ms sine or 6 ms rect. pulse rated VRRM applied 265 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg EAS TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 13 1.5 UNITS A mJ A Revision: 30-Aug-11 1 Document Number: 94296 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-MBR4060WTPbF, VS-MBR4060WT-N3 Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum instantaneous reverse current Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM CT LS dV/dt TEST CONDITIONS 20 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C Rated DC voltage VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured from top of terminal to mounting plane Rated VR VALUES 0.72 0.62 1.0 100 720 7.5 10 000 UNITS V mA pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per package RthJC DC operation Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Maximum thermal resistance, junction to ambient RthJA DC operation Approximate weight Mounting torque Marking device minimum maximum Case style TO-247AC VALUES - 55 to 150 UNITS °C 2.20 1.10 °C/W 50 6g 0.21 oz. 6 (5) 12 (10) kgf · cm (lbf · in) MBR4060WT Revision: 30-Aug-11 2 Document Number: 94296 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-MBR4060WTPbF, VS-MBR4060WT-N3 Vishay Semiconductors 1000 100 TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 1 0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1000 IR - Reverse Current (mA) 1000 100 10 1 0.1 0.01 TJ = 150 °C TJ = 100 °C TJ = 50 °C TJ = 125 °C TJ = 75 °C TJ = 25 °C 0.001 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage TJ = 25 °C ZthJC - Thermal Impedance (°C/W) CT - Junction Capacitance (pF) 100 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 0.01 0.001 0.00001 Single pulse (thermal resistance) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 P DM t 1 t 2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 1.


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