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VS-MBR4060WTPbF, VS-MBR4060WT-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base common cathode
2
TO-247AC
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
13
Anode 1
2
Anode 2
Common
cathode
TO-247AC 2 x 20 A 60 V 0.62 V
100 mA at 125 °C 150 °C
Common cathode 13 mJ
FEATURES
• 150 °C TJ operation • Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION
The VS-MBR4060WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 20 Apk, TJ = 125 °C (per leg) Range
VALUES 40 60
1020 0.62 - 55 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-MBR4060WTPbF 60
VS-MBR4060WT-N3 60
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
per leg per device
IF(AV)
TEST CONDITIONS TC = 108 °C, 50 % duty cycle, rectangular waveform
VALUES 20 40
Maximum peak one cycle non-repetitive surge current per leg
5 µs sine or 3 µs rect. pulse
Following any rated
1020
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
265
Non-repetitive avalanche energy per leg Repetitive avalanche current per leg
EAS TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH
IAR
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
13 1.5
UNITS
A
mJ A
Revision: 30-Aug-11
1 Document Number: 94296
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-MBR4060WTPbF, VS-MBR4060WT-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 %
IRM
CT LS dV/dt
TEST CONDITIONS
20 A
TJ = 25 °C TJ = 125 °C
TJ = 25 °C TJ = 125 °C
Rated DC voltage
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured from top of terminal to mounting plane
Rated VR
VALUES 0.72 0.62 1.0 100 720 7.5
10 000
UNITS V
mA pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case per package
RthJC
DC operation
Typical thermal resistance, case to heatsink
RthCS Mounting surface, smooth and greased
Maximum thermal resistance, junction to ambient
RthJA
DC operation
Approximate weight
Mounting torque Marking device
minimum maximum
Case style TO-247AC
VALUES - 55 to 150
UNITS °C
2.20
1.10 °C/W
50
6g
0.21 oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
MBR4060WT
Revision: 30-Aug-11
2 Document Number: 94296
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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VS-MBR4060WTPbF, VS-MBR4060WT-N3
Vishay Semiconductors
1000
100
TJ = 150 °C
10
TJ = 125 °C TJ = 25 °C
1 0 0.5 1.0 1.5 2.0 2.5
VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
IR - Reverse Current (mA)
1000 100 10 1 0.1 0.01
TJ = 150 °C
TJ = 100 °C TJ = 50 °C
TJ = 125 °C TJ = 75 °C TJ = 25 °C
0.001 0
10 20 30 40 50 60
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
TJ = 25 °C
ZthJC - Thermal Impedance (°C/W) CT - Junction Capacitance (pF)
100 0
10 20 30 40 50 60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001 0.00001
Single pulse (thermal resistance)
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
P DM
t
1
t
2
Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1.