www.vishay.com
VT4045BP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass...
www.vishay.com
VT4045BP-M3
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS®
TO-220AC
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 1 PIN 2
2 1
CASE
PRIMARY CHARACTERISTICS
IF(DC)
40 A
VRRM IFSM VF at IF = 40 A
45 V 240 A 0.51 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current) Package
200 °C TO-220AC
Diode variation
Common cathode
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(DC) (1)
IFSM
Operating junction temperature range (AC mode)
Junction temperature in DC forward current without ...