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MTEH0N25J3 Dataheets PDF



Part Number MTEH0N25J3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTEH0N25J3 DatasheetMTEH0N25J3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEH0N25J3 BVDSS ID@VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=6V, ID=2A 250V 3.5A 720mΩ 720mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTEH0N25J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device Package MTEH0N25J3-0-T3-G TO-25.

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CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEH0N25J3 BVDSS ID@VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=6V, ID=2A 250V 3.5A 720mΩ 720mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTEH0N25J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device Package MTEH0N25J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEH0N25J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=4A, VDD=50V Repetitive Avalanche Energy@ L=0.1mH Total Power Dissipation @TC=25℃ (Note 1) Total Power Dissipation @TC=100℃ (Note 1) Total Power Dissipation @TA=25℃ (Note 2) Total Power Dissipation @TA=70℃ (Note 2) Operating Junction and Storage Temperature Range (Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 3) Symbol VDS VGS ID IDM IAS EAS EAR PD PDSM Tj, Tstg Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 2/9 Limits 250 ±30 3.5 2.5 1.0 0.8 8.5 4 16 3 30 15 2.5 1.6 -55~+175 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 5 °C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 °C/W Thermal Resistance, Junction-to-ambient, max (Note 4) RθJA 110 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTEH0N25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 3/9 Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 250 2 - - - - V VGS=0V, ID=250μA 3 4 V VDS =VGS, ID=250μA - ±100 nA VGS=±30V, VDS=0V - 1 25 μA VDS =200V, VGS =0V VDS =200V, VGS =0V, TJ=125°C 720 720 990 1080 mΩ VGS =10V, ID=3A VGS =6V, ID=2A 1.6 - S VDS =40V, ID=1.5A Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss - 9.2 - - 1.6 - nC VDS=200V, ID=3A, VGS=10V - 3.8 - -6- - 16 15 - ns VDS=125V, ID=1A, VGS=10V, RG=6Ω - 20 - - 334 - - 26 - pF VGS=0V, VDS=25V, f=1MHz - 12 - Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - - 3.5 8 A 0.75 1 V IS=1A, VGS=0V 60 73 - ns nC IF=1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTEH0N25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 4/9 ID, Drain Current (A) Typical Characteristics Typical Output Characteristics 8 7 6 5 10V,9V,8V,7V,6V,5V 4 3 2 1 VGS=4V 0 0 3 6 9 12 15 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current 10000 1000 VGS=4.5V BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=6V VGS=10V 0.4 RDS(on), Static Drain-Source OnState Resistance(mΩ) 100 0.01 0.1 1 ID, Drain Current(A) 10 Static .


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