Document
CYStech Electronics Corp.
Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEH0N25J3
BVDSS ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=3A VGS=6V, ID=2A
250V 3.5A 720mΩ 720mΩ
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTEH0N25J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
MTEH0N25J3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=4A, VDD=50V Repetitive Avalanche Energy@ L=0.1mH
Total Power Dissipation @TC=25℃
(Note 1)
Total Power Dissipation @TC=100℃ (Note 1)
Total Power Dissipation @TA=25℃
(Note 2)
Total Power Dissipation @TA=70℃
(Note 2)
Operating Junction and Storage Temperature Range
(Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 3)
Symbol
VDS VGS
ID
IDM IAS EAS EAR
PD
PDSM Tj, Tstg
Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 2/9
Limits
250 ±30
3.5 2.5 1.0 0.8 8.5 4 16 3 30 15 2.5 1.6
-55~+175
Unit
V
A
mJ W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
5 °C/W
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
50 °C/W
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
110 °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTEH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 3/9
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS VGS(th) IGSS
IDSS
RDS(ON) *1
GFS *1
250 2
-
-
- - V VGS=0V, ID=250μA
3 4 V VDS =VGS, ID=250μA
-
±100
nA VGS=±30V, VDS=0V
-
1 25
μA
VDS =200V, VGS =0V VDS =200V, VGS =0V, TJ=125°C
720 720
990 1080
mΩ
VGS =10V, ID=3A VGS =6V, ID=2A
1.6 - S VDS =40V, ID=1.5A
Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss
- 9.2 -
- 1.6 - nC VDS=200V, ID=3A, VGS=10V
- 3.8 -
-6-
-
16 15
-
ns VDS=125V, ID=1A, VGS=10V, RG=6Ω
- 20 -
- 334 -
- 26 - pF VGS=0V, VDS=25V, f=1MHz
- 12 -
Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr
-
-
3.5 8
A
0.75 1
V IS=1A, VGS=0V
60 73
-
ns nC
IF=1A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTEH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 4/9
ID, Drain Current (A)
Typical Characteristics
Typical Output Characteristics 8 7
6 5 10V,9V,8V,7V,6V,5V 4 3 2 1 VGS=4V 0
0 3 6 9 12 15 VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current 10000
1000
VGS=4.5V
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1
Tj=25°C
0.8
0.6 Tj=150°C
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State Resistance(mΩ)
VGS=6V VGS=10V
0.4
RDS(on), Static Drain-Source OnState Resistance(mΩ)
100 0.01
0.1 1 ID, Drain Current(A)
10
Static .