TIP31CJ3

CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Spec. No. : C609J3 Issued Date : 2014.06.06 Revised Date : Page No. : 1/6 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA Pb-free lead plating and halogen-free package Symbol TIP31CJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device TIP31CJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name TIP31CJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C609J3 Issued Date : 2014.06.06 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating Junction and Storage Temperature Range Note : 1. Single Pulse , Pw≦300μs, Duty≦2%. Symbol V...