2SD1616A

RoHS 2SD1616A 2SD1616A TRANSISTOR (NPN) TO-92 FEATURE DPower dissipation TPCM: 0.75 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A V(BR)CBO: 120 V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BSAE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collector-base breakdown voltage NCollector-emitter breakdown voltage OEmitter-base breakdown voltage Collector cut-off current REmitter cut-off current TDC current gain CCollector-emitter saturation voltage * EBase-emitter saturation voltage * LBase-emitter voltage * ETransition frequency Output capacitance JTurn on time EStorage time WFall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE fT Cob ton tS tF Test conditions Ic= 10µA , IE=0 IC= 2 mA , IB=0 IE= 10µA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=2 V, IC= 100mA VCE=2 V, IC= 1A IC= 1A, IB=50mA IC= 1A, IB=50mA VCE= 2V, IC=50mA VCE=2 V, IC= 100mA IE= 0, f=1MHz Vcc=10V, IC=100mA, IB1=-IB2=10mA VBE (OFF)=-2~ -3V MIN MAX UNIT 120 V 60 V 6V 0.1 µA 0.1 µA 135 600 81 0.3 V 1.2 V 0.7 V 100 MHz 25 pF 0.07 typ ms 0.95 typ ms 0.07 typ ms *pulse test: PW≤350µS, δ≤2%. CLASSIFICATION OF hFE1 Rank L KU Range 135-270 200-400 300-600 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...