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2SD1760 Dataheets PDF



Part Number 2SD1760
Manufacturers SeCoS
Logo SeCoS
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SD1760 Datasheet2SD1760 Datasheet (PDF)

Elektronische Bauelemente 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A)  Complements the 2SB1184 D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD1760-P 2SD1760-Q Range 82~180 120~270 2SD1760-R 180~390 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13’ inch Collector   Base  Emitter A BC D GE K HF MJ N O P .

  2SD1760   2SD1760


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Elektronische Bauelemente 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A)  Complements the 2SB1184 D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD1760-P 2SD1760-Q Range 82~180 120~270 2SD1760-R 180~390 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13’ inch Collector   Base  Emitter A BC D GE K HF MJ N O P Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 3 1.5 150 -55 ~ 150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO 60 - - V Collector-emitter breakdown voltage V(BR)CEO 50 - - V Emitter-base breakdown voltage V(BR)EBO 5 - - V Collector cut-off current ICBO - - 1 μA Emitter cut-off current IEBO - - 1 μA DC current gain hFE 82 - 390 Collector-emitter saturation voltage VCE(sat) - - 1V Transition frequency fT - 90 - MHz Collector Output Capacitance COB - 40 - pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=3V, IC=500mA IC=2A, IB=200mA VCE=5V, IC=500mA, f=30MHz VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ 28-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente CHARACTERISTIC CURVES 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor http://www.SeCoSGmbH.com/ 28-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 Elektronische Bauelemente CHARACTERISTIC CURVES 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor http://www.SeCoSGmbH.com/ 28-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 3 .


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