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2SD1766

SeCoS

NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente 2SD1766 2A, 40V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” spec...


SeCoS

2SD1766

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Description
Elektronische Bauelemente 2SD1766 2A, 40V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver. CLASSIFICATION OF hFE Product Rank 2SD1766-P Range 82~180 Marking DBP 2SD1766-Q 120~270 DBQ 2SD1766-R 180~390 DBR PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch 1 Base SOT-89 4 123 A EC B F Collector 2 G H J D K L 1. Base 2. Collector 3. Emitter REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Power Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings 40 32 5.0 2.0 0.5 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO Min. 40 32 Typ. - - Max. - - Unit V V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO 5.0 - - -V 1 µA 1 µA DC current gain hFE 82 - 390 Collector-emitter saturation voltage VCE(sat) - - 0.8 V Transiti...




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