2SD1767

Elektronische Bauelemente 2SD1767 0.7A , 80V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Breakdown Voltage and Current Excellent DC Current Gain Linearity Complementary to 2SB1189 CLASSIFICATION OF hFE Product-Rank 2SD1767-P Range 82~180 Marking DCP 2SD1767-Q 120~270 DCQ 2SD1767-R 180~390 DCR PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch 1 Base SOT-89 4 A 1 B 2 C 3 E EC Collector 2 3 Emitter B F G H J D K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 1.40 4.60 4.25 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector-Base Voltage VCBO 80 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 700 Collector Power Dissipation PC 500 Maximum Junction to Ambient RθJA 250 Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=2mA, IB=0 Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)EBO ICBO IEBO 5 -- - - V IE=50µA,...