2SD1767

SMD Type Medium Power Transistor 2SD1767 Transistors Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature *1. Pw=10ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol VCBO VCEO VEBO IC IC (Pulse) *1 PC PC *2 Tj Tstg Rating 80 80 5 0.7 1 0.5 2 150 -55 to +150 Unit V V V A A W W Symbol Testconditons BVCBO IC=50ìA BVCEO IC=2mA BVEBO IE=50ìA ICBO VCB=50V IEBO VEB=4V VCE(sat) IC=500mA,IB=50mA hFE VCE=3V,IC=0.1A fT VCE=10V, IE= -50mA, f=100MHz Cob VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 DC Q 120 270 R 180 390 Min Typ Max Unit 80 V 80 V 5V 0.5 ìA 0.5 ìA 0.2 0.4 V 82 390 120 MHz 10 pF www.kexin.com.cn 1 ...