2SD1781K

Elektronische Bauelemente 2SD1781K NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K Collector 3 2 Base MARKING AF‡ ‡ = hFE ranking 1 Emitter SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 40 32 5 0.8 200 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector–Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT COB Min. 40 32 5 - 120 - Typ. - - 150 10 Max. 0.5 0.5 390 0.4 - Unit V V V μA μA V MHz pF Test Conditions IC = 50μA, IE = 0 IC = 1mA, IB = 0 IE = 50μA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 3.0V IC = 500mA, IB = 50mA VCE = 5V, IC = 50mA, f ...