2SD1781K

SMD Type TransistIoCrs Medium Power Transistor 2SD1781K Features Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA High current capacity in compact package. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current * Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 32 5 0.8 1.5 200 150 -55 to +150 Unit V V V A mW Symbol Testconditons BVCBO IC=50ìA BVCEO IC=1mA BVEBO IE=50ìA ICBO VCB=20V IEBO VEB=4V VCE(sat) IC/IB=500mA/50mA hFE VCE=3V, IC=100mA fT VCE=5V, IE= -50mA, f=100MHz Cob VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE AF QR 120 270 180 390 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Min Typ Max Unit 40 V 32 V 5V 0.5 ìA 0.5 ìA 0.1 0.4 V 120 390 150 MHz 15 pF www.kexin.com.cn 1 ...