2SD1815

Elektronische Bauelemente 2SD1815 3A , 120V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Collector-to-Emitter Saturation Voltage  Excllent Linearity of hFE  High fT  Fast Switching Time TO-251 CLASSIFICATION OF hFE Product-Rank 2SD1815-Q Range 70~140 2SD1815-R 100~200 2SD1815-S 140~280 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 120 100 6 3 1 150 -55 ~ 150 A B GE K F C D H REF. A B C D E F MJ Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.43 0.90 6.50 7.50 7.20 9.65 REF. G H J K M P P Millimeter Min. Max. 5.40 6.25 0.85 1.50 2.30 0.60 1.05 0.50 0.90 0.43 0.62 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector Output Capacitance Turn-on time Storage time Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT COB ton tS tf Min. 120 100 6 70 40 - Typ. 180 2...