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2SD1898 Dataheets PDF



Part Number 2SD1898
Manufacturers SeCoS
Logo SeCoS
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SD1898 Datasheet2SD1898 Datasheet (PDF)

Elektronische Bauelemente 2SD1898 1A , 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Breakdown Voltage and Current Excellent DC Current Gain Linearity Low Collector-Emitter Saturation Voltage CLASSIFICATION OF hFE Product Rank 2SD1898-P Range 82~180 Marking 2SD1898-Q 120~270 DF 2SD1898-R 180~390 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 123 A EC 4 B F G H J D K L 1. Base 2. C.

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Elektronische Bauelemente 2SD1898 1A , 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Breakdown Voltage and Current Excellent DC Current Gain Linearity Low Collector-Emitter Saturation Voltage CLASSIFICATION OF hFE Product Rank 2SD1898-P Range 82~180 Marking 2SD1898-Q 120~270 DF 2SD1898-R 180~390 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 123 A EC 4 B F G H J D K L 1. Base 2. Collector 3. Emitter REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.25 2.60 1.55 TYP. 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current -Continuous IC Total Power Dissipation PC Thermal Resistance from Junction to Ambient RθJA Junction & Storage temperature TJ, TSTG Ratings 100 80 5 1 0.5 250 150, -55~150 Unit V V V A W °C/ W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO 100 - - Collector-emitter breakdown voltage V(BR)CEO 80 - - Emitter-base breakdown voltage V(BR)EBO 5 - - Collector cut-off current ICBO - - 1 Emitter cut-off current DC current gain IEBO - - 1 hFE 82 - 390 Collector-emitter saturation voltage VCE(sat) - - 0.4 Transition frequency fT - 100 - Output Capacitance COB - 20 - Unit Test Conditions V V V µA µA V MHz pF IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=3V, IC=0.5A IC=0.5A, IB=20mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ 08-May-2017 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente CHARACTERISTIC CURVES 2SD1898 1A , 100V NPN Epitaxial Planar Transistor http://www.SeCoSGmbH.com/ 08-May-2017 Rev. B Any changes of specification will not be informed individually. Page 2 of 2 .


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