RoHS 2SD1898
2SD1898 TRANSISTOR (NPN)
SOT-89
FEATURES
z High VCEO z High IC z Good hFE linearity
z Low VCE (sat)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 100 80
5 1 500 150 -55-150
Units V V V A
mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance
Symbol
Test conditions
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
ICBO
VCB=80V, IE=0
IEBO
VEB=4V, IC=0
hFE VCE=3V, IC=0.5A
VCE(sat) IC=500mA, IB=20mA
fT VCE=10V, IC=50mA, f=100MHz
Cob VCB=10V,IE=0,f=1MHz
MIN TYP MAX UNIT 100 V 80 V
5V 1 μA 1 μA
82 390 0.4 V
100 MHz 20 pF
CLASSIFICATION OF hFE
Rank Range
Marking
P 82-180
Q 120-270
DF
R 180-390
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:
[email protected]
Typical Characteristics
RoHS 2SD1898
2SD1898
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:
[email protected]
.