2SD1898

SMD Type Power Transistor 2SD1898 Transistors Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature *1. Pw=20ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol VCBO VCEO VEBO IC IC (Pulse) *1 PC PC *2 Tj Tstg Rating 120 80 5 1 2 0.5 2 150 -55 to +150 Unit V V V A A W W Symbol Testconditons BVCBO IC=50ìA BVCEO IC=1mA BVEBO IE=50ìA ICBO VCB=100V IEBO VEB=4V hFE VCE=3V,IC=0.5A VCE(sat) IC=500mA,IB=20mA fT VCE=10V, IE= -50mA, f=100MHz Cob VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 DF Q 120 270 R 180 390 Min Typ Max Unit 120 V 80 V 5V 1 ìA 1 ìA 82 390 0.15 0.4 V 100 MHz 20 pF www.kexin.com.cn 1 ...