Elektronische Bauelemente
2SD2114
0.5A , 25V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C...
Elektronische Bauelemente
2SD2114
0.5A , 25V
NPN Plastic-Encapsulate
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.)
CLASSIFICATION OF hFE
Product-Rank 2SD2114-V
Range
820~1800
Marking
BBV
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
REF.
A B C D E F
Millimeter
Min. Max.
2.80 3.04
2.10
2.55
1.20 1.40
0.89 1.15
1.78
2.04
0.30
0.50
REF.
G H J K L
Millimeter
Min. Max.
0.09
0.18
0.45
0.60
0.08 0.177
0.6 REF.
0.89
1.02
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
25 20 12 500 250 150, -55~150
Base
Emitter
Unit
V V V mA mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance On Resistance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) fT Cob R(on)
Min.
25 20 12 820 -
Typ.
350 8 0.8
Max.
0.5 0.5 1800 0....