2SD2118

SMD Type Transistors Low VCE(sat) Transistor 2SD2118 Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +1.50 0.15 -0.15 + 0 .1 55 .5 5 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature TC = 25 * Pw=10ms. Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 20 6 5 10 10 1 10 150 -55 to +150 Unit V V V A (DC) A(Pulse)* A W W 1 Base 2 Collector 3 Emitter Symbol Testconditons BVCBO IC=50ìA BVCEO IC=1mA BVEBO IE=50ìA ICBO VCB=40V IEBO VEB=5V VCE(sat) IC=4 A, IB=0.1A hFE VCE=2V, IC=0.5A fT VCE=6V, IE= -50mA, f=100MHz Cob VCB=20V, IE=0A, f=1MHz Min Typ Max Unit 50 V 20 V 6V 0.5 ìA 0.5 ìA 0.3 1.0 V 120 390 150 MHz 30 pF hFE Classification Rank hFE Q 120 270 R 180 390 www.kexin.com.cn 1 ...