Transys
Electronics
LIMITED
TO-252-2Plastic-Encapsulated Transistors
2SD2118 TRANSISTOR (NPN)
FEATURES Power dissipati...
Transys
Electronics
LIMITED
TO-252-2Plastic-Encapsulated
Transistors
2SD2118
TRANSISTOR (
NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 5 Collector-base voltage
A
V(BR)CBO:
50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-252-2
6. 50¡ À0. 15 5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
5. 50¡ 0À. 10
9. 70¡ 0À. 20 0. 75¡ 0À. 10
1. 20 0. 51¡ À0. 10 0¡ 0«. 10
5¡ ã
5¡ ã 5¡ ã
1. BASE
2. 30¡ À0. 10
0. 80¡ À0. 10
0. 60¡ À0. 10 2. 30¡ À0. 10
0¡¡ ã«9¡ ã 0. 51
1. 60¡ 0À. 15
2. COLLECTOR
123
0. 6 2. 70¡ 0À. 20
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50 V 20 V 6V
0.5 µA 0.5 µA 120 390 1V 150 MHz 30 pF
CLASSIFICATION OF hFE(1) Rank Range
Marking
Q 120-270
R 180-390
Typical Characteristics
2SD2118
...
