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2SD2136 Dataheets PDF



Part Number 2SD2136
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet 2SD2136 Datasheet2SD2136 Datasheet (PDF)

Elektronische Bauelemente 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~90 2SD2136-Q 70~150 2SD2136-R 120~250 Collector 2 3 Base 1 Emitter A E F N L M K B .

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Elektronische Bauelemente 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~90 2SD2136-Q 70~150 2SD2136-R 120~250 Collector 2 3 Base 1 Emitter A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 60 60 6 3 1.25 100 150, -55~150 Unit V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage 1 V(BR)CEO 60 - - V IC=30mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 200 µA VCB=60V, IE=0 Collector Cut – Off Current ICEO - - 300 µA VCE=60V, IB=0 Emitter Cut – Off Current IEBO - - 1 mA VEB=6V, IC=0 DC Current Gain 1 Collector to Emitter Saturation Voltage 1 Collector Output Capacitance 1 hFE (1) hFE (2) VCE(sat) VBE 40 10 - - 250 VCE=4V, IC=1A -- VCE=4V, IC=3A - 1.2 V IC=3A, IB=375mA - 1.8 V VCE=4V, IC=3A Transition Frequency fT - 30 - MHz VCE=5V, IC=100mA, f=10MHz Note: 1. Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%. http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente RATINGS AND CHARACTERISTIC CURVES 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 2 .


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