RoHS 2SD2136
2SD2136 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
1.25 W (Tamb=25℃)
.,LCollector current
ICM...
RoHS 2SD2136
2SD2136
TRANSISTOR (
NPN)
DFEATURES Power dissipation
TPCM:
1.25 W (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
3A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
LBase-emitter voltage
ETransition frequency
J Turn-on time
Switch Time
Storage time
WE Fall time
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE
fT
ton tstg tf
Test conditions
Ic=1mA, IE=0 Ic=30mA, IB=0 IE=1mA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=4V, IC=1A VCE=4V, IC=3A IC=3A, IB=375mA VCE=4V, IC=3A VCE=5V, IC=0.1A, f=200MHz
IC=1A, IB1=0.1A, IB2=-0.1A
MIN TYP MAX UNIT
60 V 60 V 6V
200 µA 1 mA
40 250 10
1.2 V 1.8 V 30 MHz
0.5 µs 2.5 µs 0.4 µs
CLASSIFICATION OF hFE(1)
Rank
PQR
Range
40-90
70-150
120-250
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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