2SD2142

2SD2142 TRANSISOR (NPN) SOT–23 FEATURES  Darlington Connection for a High hFE  High Input Impedance MARKING: R1M MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 32 VEBO Emitter-Base Voltage 12 IC Collector Current 300 PC Collector Power Dissipation 200 RΘJA Thermal Resistance From Junction To Ambient 625 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 Collector cut-off current ICBO VCB=30V, IE=0 Emitter cut-off current IEBO VEB=12V, IC=0 DC current gain hFE VCE=3V, IC=100mA Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=0.2mA Transition frequency fT VCE=5V,IC=10mA, f=100MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz Min Typ 40 32 12 5000 200 2.5 Max 0.1 0.1 1.4 Unit V V V µA µA V MHz pF JinYu semiconductor www.htsemi.com ...