Elektronische Bauelemente
2SD2153
2A , 30V NPN Plastic Encapsulated Transistor
FEATURES
Small Flat Package General Pur...
Elektronische Bauelemente
2SD2153
2A , 30V
NPN Plastic Encapsulated
Transistor
FEATURES
Small Flat Package General Purpose Application
CLASSIFICATION OF hFE(1)
Product-Rank 2SD2153-U
Range
560~1200
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
2SD2153-V 820~1800
MARKING
DN
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size 7 inch
Collector
2
1
Base
3
Emitter
SOT-89
A
1
B
2
C
3
E
EC
4
B F
G H
J
D
K L
REF.
A B C D E F
Millimeter Min. Max.
4.40 3.94 1.40
4.60 4.25 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G H J K L
Millimeter Min. Max. 0.40 0.58
1.50 TYP 3.00 TYP 0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
6
Collector Current-Continuous Pulsed Collector Current 1
IC ICP
2 3
Collector Power Dissipation
PC 0.5
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit V V V A A W
°C / W °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
30
-
- V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
-
- V IC=1mA, IB=0
Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain1
V(BR)EBO ICBO IEBO hFE
6 -
560
- - V IE=50µA, IC=0
- 0.5 µA VC...