Document
SMD Type
Transistors
High Gain Amplifier Transistor 2SD2153
Features
Low saturation voltage. Excellent DC current gain characteristics.
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
12 3
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.60 -0.1
+0.10.40 -0.1
3.00+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 30 25 6 2 0.5 150
-55 to +150
Unit V V V A W
1. Base 2. Collector 3. Emiitter
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=20V
IEBO VEB=5V
VCE(sat) IC=1A, IB=20mA
hFE VCE=6V, IC=0.5A
fT VCE=10V, IE= -10mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking Rank hFE
U 560 1200
DN V 820 1800
W 1200 2700
Min Typ Max Unit 30 V 25 V 6V
0.5 ìA 0.5 ìA 0.12 0.5 V 560 2700 110 MHz 22 pF
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