2SD965A

2SD965A TRANSISTOR (NPN) FEATURES z Audio amplifier z Flash unit of camera z Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Out capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE’(2) hFE(3) VCE(sat) fT Cob Test conditions IC=0.1mA, IE=0 IC= 1mA. IB=0 IE= 10μA, IC=0 VCB= 10V,IE=0 VEB=7V, IC=0 VCE= 2 V, IC=1mA VCE= 2V, IC = 500mA VCE= 2V, IC =2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20 V , IE=0, f=1MHZ MIN 40 30 7 230 150 TYP 200 150 MAX 0.1 0.1 UNIT V V V μA μA 800 1V MHz 50 pF CLASSIFICATION OF hFE(2) Rank Q Range 230-380 R 340-600 S 560-800 JinYu semiconductor www.htsemi.com 2SD965A JinYu semiconductor www.htsemi.com ...