3DD13007

Elektronische Bauelemente 3DD13007 8A , 700V NPN Plastic-Encapsulated Transistor FEATURES Power switching applications RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J CLASSIFICATION OF tS Product-Rank 3DD13007-A Range 3-4(µs) 3DD13007-B 4-5(µs) 3DD13007-C 5-6(µs) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 700 400 9 8 2 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 700 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 400 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 9 - - V IE=1mA, IC=0 Collector Cut – Off Current Collector Cut – Off Current ICBO - - 100 µA VCB=700V, IE=0 ICEO - - 100 VCE=400V, IB=0 Emitter Cut – Off Current IEBO - - 100 µA VEB=9V, IC=0 DC Current Gain 20 - 30 hFE 5 - - VCE=5V, IC=2A VCE=5V, IC=8A - - 1 V IC=2A, IB=0.4A Collector to Emitter Saturation Voltage VCE(sat) - - 2 V IC=5A, IB=1A - - 3 V IC=8A, IB=2A Base to Emitter Saturation Voltage VBE(sat) - - 1.2 V IC=2A, IB=0.4A - 1.6 V IC=5A, IB=1A Transition Frequency fT - 4 - MHz VCE=10V, IC=0.5A, f =1MHz F...