BCW67

SMD Type TransistIoCrs PNP General Purpose Transistors BCW67,BCW68 Features For general AF applications. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 79 Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BCW67 BCW68 -45 -60 -32 -45 -5 -5 -800 -1000 -100 -200 330 150 -65 to +150 215 Unit V V V mA mA mA mA mW K/W www.kexin.com.cn 1 SMD Type TransistIoCrs BCW67,BCW68 Electrical Characteristics Ta = 25 Parameter BCW67 Collector-emitter breakdown voltage BCW68 Collector-base breakdown voltage BCW67 BCW68 Emitter-base breakdown voltage BCW67 Collector cutoff current Emitter cutoff current DC current gain * DC current gain * DC current gain * BCW68 BCW67 BCW68 A/F hFE-group B/G C/H A/F hFE-group B/G C/H A/F hFE-group B/G C/H Collector-emitter saturation voltage * Base-emitter saturation voltage * Transition frequency Collector-base capacitance Emitter-base capacitance * Pulse test: t 300ìs, D = 2%. hFE Classification TYPE Rank Marking A DAs BCW67 B DBs Symbol Testcond...