Document
SMD Type
Transistors
Medium Power Transistor BCX41
Features
SOT23 NPN silicon planar
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range
Symbol VCES VCEO VEBO ICM IC IB Ptot Tj,Tstg
Rating 125 125 5 1 800 100 330
-55 to +150
Unit V V V A mA mA
mW
0-0.1 +0.10.38
-0.1
1.Base 2.Emitter 3.collector
Electrical Characteristics Ta = 25
Parameter Collector-emitter cut-off current
Emitter-base current Collector-emitter saturation voltage * Base-emitter saturation voltage *
DC current gain *
Transitional frequency Output capacitance * Pulse test: tp = 300 ìs; d
0.02.
Symbol
Testconditons
VCE=100V ICES
VCE=100V,Tamb = 150 ICEX VCE=100V,VBE=0.2V, Tamb = 85
VCE=100V,VBE=0.2V, Tamb = 125
IEBO VEB=4V
VCE(sat) IC=300mA, IB=30mA
VBE(sat) IC=300mA, IB=30mA
IC=100ìA,VCE=1V hFE IC=100mA,VCE=1V
IC=200mA,VCE=1V
fT IC=10mA, VCE=5V, f=20MHz
Cobo VCB=10V, f=1MHz,IE=Ie=0
Min Typ Max Unit 100 nA 10 ìA 10 ìA 75 ìA 100 nA
0.9 V
1.4 V
25 63 40
100 MHz
12 pF
Marking
Marking
EK
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