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RQK0204TGDQA Dataheets PDF



Part Number RQK0204TGDQA
Manufacturers Renesas
Logo Renesas
Description N-Channel MOSFET
Datasheet RQK0204TGDQA DatasheetRQK0204TGDQA Datasheet (PDF)

RQK0204TGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “TG”. 1 2 Preliminary Datasheet R07DS0304EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak.

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RQK0204TGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “TG”. 1 2 Preliminary Datasheet R07DS0304EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings 20 ±12 2.3 8.0 2.3 0.8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0304EJ0500 Rev.5.00 Jan 10, 2014 Page 1 of 7 RQK0204TGDQA Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 20 ±12 — — 0.4 — — 1.5 — — — — — — — — — — — Typ — — — — — 100 146 3.0 127 33 14 11 28 24 7 1.5 0.3 0.4 0.85 Max — — ±10 1 1.4 130 204 — — — — — — — — — — — 1.1 Preliminary Unit V V μA μA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.2 A, VGS = 4.5 VNote3 ID = 1.2 A, VGS = 2.5 VNote3 ID = 1.2 A, VDS = 10 VNote3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1.2 A VGS = 10 V RL = 8.3 Ω Rg = 4.7 Ω VDD = 10 V VGS = 5 V ID = 2.3 A IF = 2.3 A, VGS = 0 Note3 R07DS0304EJ0500 Rev.5.00 Jan 10, 2014 Page 2 of 7 RQK0204TGDQA Main Characteristics Maximum Channel Power Dissipation Curve 1 0.8 Channel Dissipation Pch (W) 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Drain Current ID (A) Typical Output Characteristics 8 10 V Pulse Test 7V Tc = 25°C 3.0 V 5V 6 3.2 V 3.4 V 5V 4 2.8 V 2.6 V 2.4 V 2.2 V 2.0 V 2 1.8 V 1.6 V VGS = 0 V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain Current ID (A) Typical Transfer Characteristics (2) 1 VDS = 10 V Pulse Test 0.1 Tc = 75°C 0.01 25°C 0.001 –25°C 0.0001 0 0.5 1 1.5 2 2.5 3 Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage VGS(off) (V) Drain Current ID (A) Drain Current ID (A) Preliminary Maximum Safe Operation Area 100 Operation in this area is limited by RDS(on) 10 100 μs 1 ms 10.


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