Document
RQK0204TGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “TG”.
1 2
Preliminary Datasheet
R07DS0304EJ0500 Rev.5.00
Jan 10, 2014
3 D
G 1. Source 2 2. Gate
3. Drain S 1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings 20 ±12 2.3 8.0 2.3 0.8 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W °C °C
R07DS0304EJ0500 Rev.5.00 Jan 10, 2014
Page 1 of 7
RQK0204TGDQA
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test
Symbol V(BR)DSS V(BR)GSS
IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd VDF
Min 20 ±12 — — 0.4 — — 1.5 — — — — — — — — — — —
Typ — — — — — 100 146 3.0 127 33 14 11 28 24 7 1.5 0.3 0.4 0.85
Max — — ±10 1 1.4 130 204 — — — — — — — — — — — 1.1
Preliminary
Unit V V μA μA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V
(Ta = 25°C)
Test conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.2 A, VGS = 4.5 VNote3 ID = 1.2 A, VGS = 2.5 VNote3 ID = 1.2 A, VDS = 10 VNote3 VDS = 10 V VGS = 0 f = 1 MHz
ID = 1.2 A VGS = 10 V RL = 8.3 Ω Rg = 4.7 Ω
VDD = 10 V VGS = 5 V ID = 2.3 A
IF = 2.3 A, VGS = 0 Note3
R07DS0304EJ0500 Rev.5.00 Jan 10, 2014
Page 2 of 7
RQK0204TGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
1
0.8
Channel Dissipation Pch (W)
0.6
0.4
0.2
0 0 50 100 150 Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Drain Current ID (A)
Typical Output Characteristics
8
10 V
Pulse Test
7V
Tc = 25°C
3.0 V
5V 6
3.2 V
3.4 V 5V
4
2.8 V 2.6 V 2.4 V 2.2 V
2.0 V 2 1.8 V
1.6 V
VGS = 0 V 0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Transfer Characteristics (2) 1
VDS = 10 V Pulse Test
0.1
Tc = 75°C
0.01 25°C
0.001
–25°C
0.0001 0 0.5 1 1.5 2 2.5 3 Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage VGS(off) (V)
Drain Current ID (A)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area
100 Operation in this area is limited by RDS(on)
10
100
μs 1 ms
10.