RQK0609CQDQS
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 78 mΩ typ.(at VGS = 4.5 V, ID = 2 A)
Low drive current High speed switching VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
1G
Note: Marking is “CQ“.
REJ03G1622-0100 Rev.1.00
Mar 03, 20...
