RQK0603CGDQA

RQK0603CGDQA Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 212 mΩ typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “CG”. Preliminary Datasheet R07DS0307EJ0600 Rev.6.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Ratings 60 ±20 2 5 2 0.8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0307EJ0600 Rev.6.00 Jan 10, 2014 Page 1 of 7 RQK0603CGDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 μA, VDS = 0 Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0 Drain to source leak current IDSS — — 1 μA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 212 265 mΩ ID = 1 A, VGS = 10 VNote3 Forward transfer admittance RDS(on) — ...