AO4354

AO4354 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 23A < 3.7mΩ < 5.3mΩ Top View D D D D SOIC-8 Bottom View G S S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=100°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS EAS VDS Spike 100ns VSPIKE TA=25°C Power Dissipation B TA=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 23 14 174 37 68 36 3.1 1.2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units V V A A mJ V W °C Units °C/W °C/W °C/W Rev0: April 2012 www.aosmd.com Page 1 of 5 AO4354 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS...